Nanometer variation-tolerant SRAM statistical design for yield

Variability is one of the most challenging obstacles for IC design in nanometer regime. In nanometer technologies, SRAM show an increased sensitivity to process variations due to low-voltage operation requirements, which are aggravated by the strong demand for lower power consumption and cost, while achieving higher performance and density. Nanometer Variation-Tolerant SRAM: Circuits and Statistical Design for Yield is the main resource of robust SRAM circuits and statistical design methodologies for researchers and practicing engineers inthe field of memory design. This book combines state of the art circuit techniques and statistical methodologies to optimize SRAM performance and yield in nanometer technologies. It is an essential reference for researches, professionals and students working on SRAM design and digital circuits in general. INDICE: Variability in Nanometer Technologies.- SRAM Failure Mechanisms and Impact of Technology Scaling.- SRAM Circuit Techniques for Functional Yield.- SRAM Statistical Methodologies for Read Access Yield.- SRAM Power Reduction in the Presence of Process Variations.- Future Prospects of SRAM Design under Variability.

• ISBN: 978-1-4614-1748-4
• Editorial: Springer
• Encuadernacion: Cartoné
• Fecha Publicación: 28/06/2012
• Nº Volúmenes: 1
• Idioma: Inglés