Advanced power MOSFETs concepts

Advanced power MOSFETs concepts

Baliga, B. Jayant

176,75 €(IVA inc.)

During the last decade many new concepts have been proposed for improving theperformance of power MOSFETs. The results of this research are dispersed in the technical literature among journal articles and abstracts of conferences. Consequently, the information is not readily available to researchers and practicing engineers in the power device community. There is no cohesive treatment of the ideas to provide an assessment of the relative merits of the ideas. Advanced Power MOSFETs Concepts provides an in-depth treatment of the physics of operation of advanced power MOSFETs. Analytical models for explaining the operation of all the advanced power MOSFETs will be developed. The results of numerical simulations will be provided to give additional insight into the device physics and validate the analytical models. The results of two-dimensional simulations will be provided to corroborate the analytical models and give greater insight into the device operation. Discusses the SSCFETs and the JBSFETs devices and how implementing them can have a significant impact on improving the efficiency of the Voltage-Regulator-Modules used to deliver power to Microprocessors and Graphics Chips in Laptops and Servers Covers the CC-MOSFETs and theGD-MOSFET and applications in all lower voltage circuits, especially the automotive electronics area Includes numerical simulation examples to explain the operating physics and validate the models Extensive coverage of the role of silicon carbide in the design and structure of power rectifiers INDICE: The SSCFET (silicon semiconductor corp FET).- The JBSFET (junctionbarrier controlled Schottky FET).- The CC-MOSFET (charge-coupled MOSFET).- The GD-MOSFET (graded-doped MOSFET).- The SL-MOSFET (super-linear MOSFET).- The 'COOL-MOS' FET (infineon MOSFET).- The SiC ACCUFET (accumulation-mode MOSFET).- The SiC S-UMOSFET (shielded trench MOSFET).

  • ISBN: 978-1-4419-5916-4
  • Editorial: Springer
  • Encuadernacion: Cartoné
  • Páginas: 335
  • Fecha Publicación: 01/05/2010
  • Nº Volúmenes: 1
  • Idioma: Inglés