During the last decade, many new concepts have been proposed for improving the performance of power rectifiers and transistors. The results of this research are dispersed in the technical literature among journal articles and abstracts of conferences. Consequently, the information is not readily available to researchers and practicing engineers in the power device community. There is nocohesive treatment of the ideas to provide an assessment of the relative merits of the ideas. Advanced Power Rectifier Concepts provides an in-depth treatment of the physics of operation of advanced power rectifiers. Analytical models for explaining the operation of all the advanced power rectifier devices will be developed. The results off numerical simulations will be provided to provide additional insight into the device physics and validate the analytical models. The results of two-dimensional simulations will be provided to corroborate the analytical models and provide greater insight into the device operation.Provides extensive analytical formulations for design and analysis of structures such as the Junction Barrier controlled Schottky (JBS) Rectifier Includes numerical simulation examples to explain the operating physics and validate the models Extensive coverage of the role of silicon carbide in the design and structure of power rectifiers INDICE: The Schottky rectifier.- The P-i-N rectifier.- Junction barrier controlled Schottky rectifier.- MOS barrier controlled Schottky rectifier.- Trench Schottky barrier controlled Schottky rectifier.- Merged P-i-N Schottky rectifier.
- ISBN: 978-0-387-75588-5
- Editorial: Springer
- Encuadernacion: Cartoné
- Páginas: 300
- Fecha Publicación: 01/05/2009
- Nº Volúmenes: 1
- Idioma: Inglés