With increasing diversity of applications, device size reduction, technological variation and aggressive design delivery deadlines, a large menu of MOSFET models have evolved for the same type of fabrication process technology. Practicing designers and educators are confronted with a confusing situation about the rationale of model selection and usage, and keeping track of ever modifying models has not been as easy in spite of their availability in public domain.Lack of suitable comprehensive material for generalists has been a key problem and the diversity of models to explain the same set of physical phenomena isa traumatic proposition for a novice learner. This book presents a unified view of MOSFET modeling, allowing the practitioner to view and interpret device phenomena concurrently using different modeling strategies, as opposed to gaining familiarity with the models in isolation. Secondly, while MOS devices are well covered in a number of text books, device physics do not get necessarily linked to model parameters which serve as an input in design phase, leaving a wide gap between device understanding and its use for optimal circuit performance. Further, being technology driven, models undergo evolution continuously. Yet from the projection of International Technology Roadmap for Semiconductors(ITRS) it is possible to identify the core physical concepts that will drive the evolution and trend that is likely to dominate the future. Therefore, the impact of quantum mechanical related phenomena has been given more prominent presence in the pedagogic approach of this book than is available in currently available texts.
- ISBN: 978-0-470-82342-2
- Editorial: John Wiley & Sons
- Encuadernacion: Cartoné
- Páginas: 512
- Fecha Publicación: 22/05/2009
- Nº Volúmenes: 1
- Idioma: Inglés