GaN Transistor Modeling for RF and Power Electronics: Using The ASM-GaN-HEMT Model

GaN Transistor Modeling for RF and Power Electronics: Using The ASM-GaN-HEMT Model covers all aspects of characterization and modeling of GaN transistors for both RF and Power electronics applications. Chapters cover an in-depth analysis of the industry standard compact model ASM-HEMT for GaN transistors. The book details the core surface-potential calculations and a variety of real device effects, including trapping, self-heating, field plate effects, and more to replicate realistic device behavior. The authors also include chapters on step-by-step parameter extraction procedures for the ASM-HEMT model and benchmark test results. GaN is the fastest emerging technology for RF circuits as well as power electronics. This technology is going to grow at an exponential rate over the next decade. This book is envisioned to serve as an excellent reference for the emerging GaN technology, especially for circuit designers, materials science specialists, device engineers and academic researchers and students. Provides an overview of the operation and physics of GaN-based transistors Describes all aspects of the ASM-HEMT model for GaN circuits, which is an industry standard model, by the developers of the model Details parameter extraction of GaN devices and measurement data requirements for GaN model extraction INDICE: Part I: Introduction 1. GaN Device Physics 2. GaN HEMT Models Part II: ASM-HEMT Model 3. Surface Potential, 2DEG, and Drain Current Model 4. Self-Heating and Temperature Effects 5. Noise and Gate Current Part III: ASM-HEMT for GaN Power Electronics 6. GaN Power Device Characterization 7. Terminal Charges and Capacitances 8. TCAD Simulation 9. Switching Collapse Part IV: ASM-HEMT for GaN RF Electronics 10. Characterization of RF GaN HEMTs 11. RF Modeling-I 12. RF Modeling-II Part V: Miscellaneous 13. Parameter Extraction 14. Model Quality Testing

• ISBN: 978-0-323-99871-0
• Editorial: Woodhead Publishing
• Encuadernacion: Rústica
• Páginas: 425
• Fecha Publicación: 01/02/2023
• Nº Volúmenes: 1
• Idioma: Inglés