Microscopy of semiconducting materials 2007: Proceedings of the 15th Conference, 2-5 April 2007, Cambridge, UK
Cullis, A.
Midgley, P.
The fifteenth international conference on Microscopy of Semiconducting Materials took place in Cambridge, UK on 2-5 April 2007. It was organised by the Institute of Physics, with co-sponsorship by the Royal Microscopical Society and endorsement by the Materials Research Society. The conference focused upon themost recent advances in the study of the structural and electronic propertiesof semiconducting materials by the application of transmission and scanning electron microscopy, scanning probe microscopy and X-ray-based methods. Conference sessions concentrated on key topics including state-of-the-art studies in high resolution imaging and analytical electron microscopy, advanced scanning probe microscopy, scanning electron microscopy and focused ion beam applications, novel epitaxial layer phenomena, the properties of quantum nanostructures,III-nitride developments, GeSi/Si for advanced devices, metal-semiconductor contacts and silicides Gives a complete overview of nanostructures of all types, from quantum dots, wires to nanotubes Complete study of the effects of semiconductor processing treatment such as oxidatorion, nitridation, ion implantation, and annealing Provides an up-to-date overview of lattice defects and impurity behaviour in semiconducting materials
- ISBN: 978-1-4020-8614-4
- Editorial: Springer
- Encuadernacion: Cartoné
- Páginas: 588
- Fecha Publicación: 01/09/2008
- Nº Volúmenes: 1
- Idioma: Inglés