This book describes the technology of charge-trapping non-volatile memories and their uses. The authors explain the device physics of each device architecture and provide a concrete description of the materials involved and the fundamental properties of the technology. Modern material properties, used as charge-trapping layers, for new applications are introduced.
- Provides a comprehensive overview of the technology for charge-trapping non-volatile memories;
- Details new architectures and current modeling concepts for non-volatile memory devices;
- Focuses on conduction through multi-layer gate dielectrics stacks.
- ISBN: 978-3-319-48703-8
- Editorial: Springer
- Encuadernacion: Cartoné
- Páginas: 253
- Fecha Publicación: 03/01/2017
- Nº Volúmenes: 1
- Idioma: Inglés