VOL 1: Growth, Defects, and Novel Applications 1) Bulk growth of SiC - reviewon advances of SiC vapor growth for improved doping and systematic study on dislocation evolution 2) Bulk and Epitaxial Growth of Micropipe-free Silicon Carbide on Basal and Rhombohedral Plane Seeds 3) Formation of extended defects in 4H-SiC epitaxial growth and development of fast growth technique 4) Fabrication of High Performance 3C-SiC Vertical MOSFETs by Reducing Planar Defects 5) Identification of intrinsic defects in SiC: Towards an understanding of defectaggregates by combining theoretical and experimental approaches 6) EPR Identification of Intrinsic Defects in 4H-SiC 7) Electrical and Topographical Characterization of Aluminum Implanted Layers in 4H Silicon Carbide 8) Optical properties of as-grown and process-induced stack-ing faults in 4H-SiC 9) Characterization of defects in silicon carbide by Raman spectroscopy 10) Lifetime-killing defects in 4H-SiC epilayers and lifetime control by low-energy electron irradiation 11) Identification and carrier dynamics of the dominant lifetime limiting defect in n- 4H-SiC epitaxial layers 12) Optical Beam Induced Current Measurements: principles and applications to SiC device characterisation 13) Measurements of Impact Ionization Coefficients of Electrons and Holes in 4H-SiC andtheir Application to Device Simulation 14) Analysis of interface trap parameters from double-peak conductance spectra taken on N-implanted 3C-SiC MOS capacitors 15) Non-basal plane SiC surfaces: Anisotropic structures and low-dimensional electron systems 16) Comparative Columnar Porous Etching Studies on n-type 6H SiC Crystalline faces 17) Micro- and Nanomechanical Structures for Silicon Carbide MEMS and NEMS 18) Epitaxial Graphene: an new Material 19) Density Functional Study of Graphene Overlayers on SiC VOL 2: Power Devices and Sensors 1) Present Status and Future Prospects for Electronics in EVs/HEVs and Expectations for Wide Bandgap Semiconductor Devices 2) Silicon Carbide power devices - Status and upcoming challenges with a special attention to industrial application 3) Effect of an intermediate graphite layer on the electronic propertiesof metal/SiC contacts 4) Reliability aspects of SiC Schottky Diodes 5) Design, process, and performance of all-epitaxial normally-off SiC JFETs 6) Extreme Temperature SiC Integrated Circuit Technology 7) 1200 V SiC Vertical-channel-JFET based cascode switches 8) Alternative techniques to reduce interface trapsin n-type 4H-SiC MOS capacitors 9) High electron mobility ahieved in n-channel 4H-SiC MOSFETs oxidized in the presence of nitrogen 10) 4H-SiC MISFETs with Nitrogen-containing Insulators 11) SiC Inversion Mobility 12) Development of SiC diodes, power MOSFETs and intellegent Power Modules 13) Reliability issues of 4H-SiC power MOSFETs toward high junction temperature operation 14) Application of SiC-Transistors in Photovoltaic-Inverters 15) Design and Technology Considerations for SiC Bipolar Devices: BJTs, IGBTs,and GTOs 16) Suppressed surface recombination structure and surface passivation for improving current gainof 4H-SiC BJTs 17) SiC avalanche photodiodes and photomultipliers for ultraviolet and solar-blind light detection
- ISBN: 978-3-527-41002-6
- Editorial: Wiley-VCH
- Encuadernacion: Cartoné
- Páginas: 980
- Fecha Publicación: 21/10/2009
- Nº Volúmenes: 2
- Idioma: Inglés