Magnetic random–access memory (MRAM) is poised to replace traditional computer memory that is based on complementary metal–oxide semiconductors. This book serves as an ideal introduction to MRAM for microelectronic engineers and is written by specialists in magnetic materials and devices. Presenting readers with the fundamentals of magnetic materials and technology, this resource helps bridge the cultural gap between the microelectronics and magnetics communities.
- ISBN: 978-1-119-00974-0
- Editorial: Wiley–Blackwell
- Encuadernacion: Cartoné
- Páginas: 250
- Fecha Publicación: 28/12/2015
- Nº Volúmenes: 1
- Idioma: Inglés