Molecular Beam Epitaxy (MBE): From Research to Mass Production, Second Edition, provides a comprehensive overview of the latest MBE research and applications in epitaxial growth, along with a detailed discussion and 'how to' on processing molecular or atomic beams that occur on the surface of a heated crystalline substrate in a vacuum. The techniques addressed in the book can be deployed wherever precise thin-film devices with enhanced and unique properties for computing, optics or photonics are required. It includes new semiconductor materials, new device structures that are commercially available, and many that are at the advanced research stage. This second edition covers the advances made by MBE, both in research and in the mass production of electronic and optoelectronic devices. Enhancements include new chapters on MBE growth of 2D materials, Si-Ge materials, AIN and GaN materials, and hybrid ferromagnet and semiconductor structures. Condenses the fundamental science of MBE into a modern reference, speeding up literature reviewDiscusses new materials, novel applications and new device structures, grounding current commercial applications with modern understanding in industry and researchIncludes coverage of MBE as mass production epitaxial technology and how it enhances processing efficiency and throughput for the semiconductor industry and nanostructured semiconductor materials research community INDICE: 1. Molecular beam epitaxy of transition metal monopnictides Gavin Richard Bell 2. Migration Enhanced Epitaxy of Low Dimensional Structures Yoshiji Horikoshi 3. MBE growth of Si-Ge materials and heterostructures Maksym Myronov 4. SiGeSn MBE Inga Anita Fischer 5. MBE of Dilute Nitride Optoelectronic Devices Mircea Guina 6. Nonpolar Cubic III Nitrides: From the Basics of Growth to Device Applications Donat J. As 7. AlGaN nanowires for deep ultraviolet optoelectronics Zetian Mi 8. plasma-assisted MBE of (Al,Ga)N layers and heterostructures Valentin Jmerik 9. InAsBi and InAsSbBi materials Shane Johnson, Arvind Joshua Shalindar, 10. Molecular beam epitaxy of GaAsBi and related quaternary alloys Masahiro Yoshimoto, Kunishige Oe Oe, 11. Molecular Beam Epitaxy of IV-VI Compounds: Heterostructures/Superlattices/Devices Gunther Springholz 12. NIL-based site-control epitaxy Mircea Guina, Teemu Hakkarainen, 13. Droplet epitaxy of nanostructures Stefano Sanguinetti 14. Epitaxial Growth of Thin Films And Quantum Structures of II-VI Visible-Band Gap Semiconductors Isaac Hernandez-Calderon 15. MBE-grown wide band gap II-VI semiconductors for intersubband device applications Aidong Shen 16. ZnO Materials and Devices grown by MBE Ümit Özgür 17. MBE of Complex Oxides Roman Engel-Herbert 18. Epitaxial Systems Combining Oxides and Semiconductors Gang niu, Bertrand Vilquin, 19. MBE Growth of As and Sb based Ferromagnetic III-V Semiconductors Fumihiro Matsukura 20. Nanostructures of SiGe and ferromagnetic properties Kang L. Wang 21. MBE of Hybrid topological/ insulator/ferromagnetic heterostructures and devices Samarth .N, Anthony Richardella, 22. Challenges and opportunities in MBE growth of 2D crystals: an overview Huili Grace Xing 23. Epitaxy of Graphene and h-BN vignaud .D 24. Molecular beam epitaxy of graphene and hexagonal boron nitride J. Marcelo J. Lopes, Dominique Vignaud, 25. MBE of Transition Metal Dichalcogenides and heterostructures Christopher Hinkle and Christopher Hinkle 26. Growth and Characterization of Fullerene/GaAs Interfaces and C60 Doped GaAs and AlGaAs layers Jiro Nishinaga 27. Thin Films of Organic Molecules: Interfaces and Epitaxial Growth Achim Schöll 28. MBE of II-VI Lasers Sergey V. Ivanov, Sedova IV, Sorokin .SV, 29. THz Quantum Cascade Lasers Aaron Maxwell Andrews 30. GaSb lasers grown on Silicon substrate for telecom application Eric Tournié 31. GaP/Si based photovoltaic devices grown by MBE Charles Cornet 32. MBE as a Mass Production Technique Matt Marek 33. Mass production of optoelectronic devices: LEDs, lasers, VCSELs Roland Jäger 34. Mass Production of Sensors Grown by MBE Naohiro Kuze 35. MBE as a Mass Production Enabling Technology for Electronic/Optoelectronic Devices Yung-Chung Kao 36. Molecular Beam Epitaxy in the Ultra-Vacuum of Space: Present and Near Future Oleg Pchelyakov
- ISBN: 978-0-12-812136-8
- Editorial: Elsevier
- Encuadernacion: Rústica
- Páginas: 800
- Fecha Publicación: 01/06/2018
- Nº Volúmenes: 1
- Idioma: Inglés