Nitride Semiconductor Light-Emitting Diodes (LEDs): Materials, Technologies and Applications

The development of nitride-based light-emitting diodes (LEDs) has led to advancements in high-brightness LED technology for solid-state lighting, handheld electronics, and advanced bioengineering applications. Nitride Semiconductor Light-Emitting Diodes (LEDs) reviews the fabrication, performance, and applications of this technology that encompass the state-of-the-art material and device development, and practical nitride-based LED design considerations. Part one reviews the fabrication of nitride semiconductor LEDs. Chapters cover molecular beam epitaxy (MBE) growth of nitride semiconductors, modern metalorganic chemical vapor deposition (MOCVD) techniques and the growth of nitride-based materials, and gallium nitride (GaN)-on-sapphire and GaN-on-silicon technologies for LEDs. Nanostructured, non-polar and semi-polar nitride-based LEDs, as well as phosphor-coated nitride LEDs, are also discussed. Part two covers the performance of nitride LEDs, including photonic crystal LEDs, surface plasmon enhanced LEDs, color tuneable LEDs, and LEDs based on quantum wells and quantum dots. Further chapters discuss the development of LED encapsulation technology and the fundamental efficiency droop issues in gallium indium nitride (GaInN) LEDs. Finally, part three highlights applications of nitride LEDs, including liquid crystal display (LCD) backlighting, infrared emitters, and automotive lighting. Nitride Semiconductor Light-Emitting Diodes (LEDs) is a technical resource for academics, physicists, materials scientists, electrical engineers, and those working in the lighting, consumer electronics, automotive, aviation, and communications sectors. Reviews fabrication, performance, and applications of this technology that encompass the state-of-the-art material and device development, and practical nitride-based LED design considerationsCovers the performance of nitride LEDs, including photonic crystal LEDs, surface plasmon enhanced LEDs, color tuneable LEDs, and LEDs based on quantum wells and quantum dotsHighlights applications of nitride LEDs, including liquid crystal display (LCD) backlighting, infra-red emitters, and automotive lighting INDICE: Contributor contact details Woodhead Publishing Series in Electronic and Optical Materials Dedication Preface Part I: Materials and fabrication1: Molecular beam epitaxy (MBE) growth of nitride semiconductorsAbstract1.1 Introduction1.2 Molecular beam epitaxial (MBE) growth techniques1.3 Plasma-assisted MBE (PAMBE) growth of nitride epilayers and quantum structures1.4 Nitride nanocolumn (NC) materials1.5 Nitride nanostructures based on NCs1.6 Conclusion2: Modern metal-organic chemical vapor deposition (MOCVD) reactors and growing nitride-based materialsAbstract2.1 Introduction2.2 MOCVD systems2.3 Planetary reactors2.4 Close-coupled showerhead (CCS) reactors2.5 In situ monitoring systems and growing nitride-based materials2.6 Acknowledgements3: Gallium nitride (GaN) on sapphire substrates for visible LEDsAbstract3.1 Introduction3.2 Sapphire substrates3.3 Strained heteroepitaxial growth on sapphire substrates3.4 Epitaxial overgrowth of GaN on sapphire substrates3.5 GaN growth on non-polar and semi-polar surfaces3.6 Future trends4: Gallium nitride (GaN) on silicon substrates for LEDsAbstract4.1 Introduction4.2 An overview of gallium nitride (GaN) on silicon substrates4.3 Silicon overview4.4 Challenges for the growth of GaN on silicon substrates4.5 Buffer-layer strategies4.6 Device technologies4.7 Conclusion5: Phosphors for white LEDsAbstract5.1 Introduction5.2 Optical transitions of Ce3 + and Eu2 +5.3 Chemical composition of representative nitride and oxynitride phosphors5.4 Compounds activated by Eu2 +5.5 Compounds activated by Ce3 +5.6 Features of the crystal structure of nitride and oxynitride phosphors5.7 Features of optical transitions of nitride and oxynitride phosphors5.8 Conclusion and future trends5.9 Acknowledgements6: Fabrication of nitride LEDsAbstract6.1 Introduction6.2 GaN-based flip-chip LEDs and flip-chip technology6.3 GaN FCLEDs with textured micro-pillar arrays6.4 GaN FCLEDs with a geometric sapphire shaping structure6.5 GaN thin-film photonic crystal (PC) LEDs6.6 PC nano-structures and PC LEDs6.7 Light emission characteristics of GaN PC TFLEDs6.8 Conclusion7: Nanostructured LEDsAbstract7.1 Introduction7.2 General mechanisms for growth of gallium nitride (GaN) related materials7.3 General characterization method7.4 Top-down technique for nanostructured LEDs7.5 Bottom-up technique for GaN nanopillar substrates prepared by molecular beam epitaxy7.6 Conclusion8: Nonpolar and semipolar LEDsAbstract8.1 Motivation: limitations of conventional c-plane LEDs8.2 Introduction to selected nonpolar and semipolar planes8.3 Challenges in nonpolar and semipolar epitaxial growth8.4 Light extraction for nonpolar and semipolar LEDs Part II: Performance of nitride LEDs9: Efficiency droop in gallium indium nitride (GaInN)/gallium nitride (GaN) LEDsAbstract9.1 Introduction9.2 Recombination models in LEDs9.3 Thermal roll-over in gallium indium nitride (GaInN) LEDs9.4 Auger recombination9.5 High-level injection and the asymmetry of carrier concentration and mobility9.6 Non-capture of carriers9.7 Polarization fields9.8 Carrier delocalization9.9 Discussion and comparison of droop mechanisms9.10 Methods for overcoming droop10: Photonic crystal nitride LEDsAbstract10.1 Introduction10.2 Photonic crystal (PC) technology10.3 Improving LED extraction efficiency through PC surface patterning10.4 PC-enhanced light extraction in P-side up LEDs10.5 Modelling PC-LEDs10.6 P-side up PC-LED performance10.7 PC-enhanced light extraction in N-side up LEDs10.8 Summary10.9 Conclusions11: Surface plasmon enhanced LEDsAbstract11.1 Introduction11.2 Mechanism for plasmon-coupled emission11.3 Fabrication of plasmon-coupled nanostructures11.4 Performance and outlook11.5 Acknowledgements12: Nitride LEDs based on quantum wells and quantum dotsAbstract12.1 Light-emitting diodes (LEDS)12.2 Polarization effects in III-nitride LEDs12.3 Current status of III-nitride LEDs12.4 Modern LED designs and enhancements13: Color tunable LEDsAbstract13.1 Introduction13.2 Initial idea for stacked LEDs13.3 Second-generation LED stack with inclined sidewalls13.4 Third-generation tightly integrated chip-stacking approach13.5 Group-addressable pixelated micro-LED arrays13.6 Conclusions14: Reliability of nitride LEDsAbstract14.1 Introduction14.2 Reliability testing of nitride LEDs14.3 Evaluation of LED degradation14.4 Degradation mechanisms14.5 Conclusion15: Chip packaging: encapsulation of nitride LEDsAbstract15.1 Functions of LED chip packaging15.2 Basic structure of LED packaging modules15.3 Processes used in LED packaging15.4 Optical effects of gold wire bonding15.5 Optical effects of phosphor coating15.6 Optical effects of freeform lenses15.7 Thermal design and processing of LED packaging15.8 Conclusion Part III: Applications of nitride LEDs16: White LEDs for lighting applications: the role of standardsAbstract16.1 General lighting applications16.2 LED terminology16.3 Copying traditional lamps?16.4 Freedom of choice16.5 Current and future trends17: Ultraviolet LEDsAbstract17.1 Research background of deep ultraviolet (DUV) LEDs17.2 Growth of low threading dislocation density (TDD) AlN layers on sapphire17.3 Marked increases in internal quantum efficiency (IQE)17.4 Aluminum gallium nitride (AlGaN)-based DUV-LEDs fabricated on high-quality aluminum nitride (AlN)17.5 Increase in electron injection efficiency (EIE) and light extraction efficiency (LEE)17.6 Conclusions and future trends18: Infrared emitters made from III-nitride semiconductorsAbstract18.1 Introduction18.2 High indium (In) content alloys for infrared emitters18.3 Rare-earth (RE) doped gallium nitride (GaN) emitters18.4 III-nitride materials for intersubband (ISB) optoelectronics18.5 ISB devices18.6 Conclusions18.7 Acknowledgements19: LEDs for liquid crystal display (LCD) backlightingAbstract19.1 Introduction19.2 Types of LED LCD backlighting units (BLUs)19.3 Technical considerations for optical films and plates19.4 Requirements for LCD BLUs19.5 Advantages and history of LED BLUs19.6 Market trends and technological developments19.7 Optical design20: LEDs in automotive lightingAbstract20.1 Introduction20.2 Forward lighting20.3 Signal lighting20.4 Human factor issues with LEDs20.5 Energy and environmental issues20.6 Future trends20.7 Sources of further information and advice20.8 Acknowledgments Index

• ISBN: 978-0-08-101406-6
• Editorial: Woodhead Publishing
• Encuadernacion: Rústica
• Páginas: 676
• Fecha Publicación: 30/06/2016
• Nº Volúmenes: 1
• Idioma: Inglés