Nitride Semiconductors covers the latest breakthrough research and exciting developments in the field of III-nitride compound semiconductors. It includes important topics on the fundamentals of materials growth, characterization, and optoelectronic device applications of III-nitrides. Bulk, quantum well, quantum dot, and nanowire heterostructures are all thoroughly explored. Contains the latest breakthrough research in III-nitride optoelectronics Provides a comprehensive presentation that covers the fundamentals of materials growth and characterization and the design and performance characterization of state-of-the-art optoelectronic devices Presents an in-depth discussion on III-nitride bulk, quantum well, quantum dot, and nanowire technologies INDICE: 1. Monolayer In(Ga)N matrix and device applications Akihiko Yoshikawa 2. Molecular beam epitaxial growth and characterization of InN nanowires Zetian Mi 3. III-N Wide Bandgap Deep-UV Lasers and Photodetectors Russell D. Dean Dupuis 4. Development of deep UV LEDs and current problems in material and device technology Max Shatalov 5. Cubic GaN Can Bayram 6. AlGaN UV LEDs Mary Crawford 7. Selective area growth of III-nitride nanowires Enrique Calleja 8. AlGaN nanowire deep UV optoelectronics Zetian Mi 9. Structural characterization of III-nitride nanowires Bruno Daudin 10. InGaN nanowire plasmonic lasers Shangjr (Felix) Gwo 11. Historic overview of InN and In-rich InGaN Yasushi Nanishi 12. InGaN nanowire lasers Pallab Bhattacharya 13. Electrically injected quantum cascade lasers based on AlGaN epilayers Hideki Hirayama
- ISBN: 978-0-12-809584-3
- Editorial: Academic Press
- Encuadernacion: Cartoné
- Fecha Publicación: 16/01/2017
- Nº Volúmenes: 1
- Idioma: Inglés