Recent developments in the technology of silicon nanocrystals and silicon nanostructures, where quantum-size effects are important, are systematically described including examples of device applications. Due to the strong quantum confinement effect, the material properties are freed from the usual indirect- ordirect-bandgap regime, and the optical, electrical, thermal, and chemical properties of these nanocrystalline and nanostructured semiconductors are drastically changed from those of bulk silicon. In addition to efficient visible luminescence, various other useful material functions are induced in nanocrystalline silicon and periodic silicon nanostructures. Offers the first comprehensivetreatment of recent advances in quantum-sized silicon device technology Presents systematic and vivid descriptions from a technological viewpoint, providing a realistic perspective on forthcoming silicon device concepts in the post-scaling era Shows how silicon nanocrystal technology is fundamental to the future of silicon electronics, optoelectronics, and photonics INDICE: I. Photonic Devices. Si-rich Dielectrics for Active Photonic Devices, L. Kimerling. Nanocrystalline Si EL Devices, B. Gelloz. Surface and Superlattice, R. Boukherroub. Optical Gain and Lasing in Low Dimensional Silicon: the quest for an injection laser, L. Pavesi.- II. Electronic Devices. Silicon Single-Electron Devices, Y. Takahashi. Room Temperature Silicon Spin Based Transitor, M. Cahay. Electron Transport in Nanocrystalline Silicon, H. Mizuta. Silicon Nanocrystal Nonvolatile Memories, B. White. Nanocystalline Silicon Ballistic Electron Emitter, T. Komoda.- III. Functional Devices. Porous Silicon Optical Label-free Biosensors, P. Fauchet. Ultrasonic Emission from NanocrystallineSilicon, H. Shinoda.
- ISBN: 978-0-387-78688-9
- Editorial: Springer
- Encuadernacion: Cartoné
- Páginas: 350
- Fecha Publicación: 01/12/2008
- Nº Volúmenes: 1
- Idioma: Inglés