Silicon Carbide One-dimensional Nanostructures

Silicon Carbide One-dimensional Nanostructures

Latu–Romain, Laurence
Ollivier, Maelig

66,77 €(IVA inc.)

Dedicated to SiC–based 1D nanostructures, this book explains the properties and different growth methods of these nanostructures. It details carburization of silicon nanowires, a growth process for obtaining original Si–SiC core–shell nanowires and SiC nanotubes of high crystalline quality, thanks to the control of the siliconout–diffusion. The potential applications of these particular nano–objects is also discussed, with regards to their eventual integration in biology, energy and electronics. INDICE: 1. Introduction.2. Properties of SiC based one–dimensional nanostructures.3. State of the art of the growth of SiC–based one–dimensional nanostructures.4. An original growth process: the carburization of Si nanowires.5. SiC–based one–dimensional nanostructure technologies6. Conclusion

  • ISBN: 978-1-84821-797-3
  • Editorial: ISTE Ltd.
  • Encuadernacion: Cartoné
  • Páginas: 148
  • Fecha Publicación: 04/05/2015
  • Nº Volúmenes: 1
  • Idioma: Inglés