Ultra-wide Bandgap Semiconductor Materials

Ultra-wide Bandgap Semiconductor Materials

Liao, Meiyong
Shen, Bo
Wang, Zhanguo

223,60 €(IVA inc.)

Ultra-wide Bandgap Semiconductors (UWBG) covers the recent progress of the most promising UWBG materials including high-Al-content AlGaN, diamond, B-Ga2O3, and boron nitrides. The coverage of these materials is comprehensive, addressing materials growth, physics properties, doping, device design, fabrication and performance. The most relevant and important potential applications are covered including power electronics, RF electronics, and DUV optoelectronics. There is also a chapter on the novel structures based on the UWBG, such as the heterojunctions, the low-dimensional structures, and their devices. This book is ideal for materials scientists and engineers in academia and R&D searching for materials superior to silicon carbide and gallium nitride. One-stop resource on the most promising ultra-wide bandgap semiconducting materials including high-Al-content AlGaN, diamond, ?-Ga2O3, boron nitrides, and low-dimensional materialsComprehensive coverage from materials growth and properties to device deisgn, fabrication and performanceFeatures most relevant applications including power electronics, RF electronics and DUV optoelectronics INDICE: 1. Al rich AlxGa1-xN semiconductor: Materials and their optoelectronic devices 2. Recent progress on diamond semiconductor 3. The emerging semiconductor B-Ga2O3 4. Recent progress of boron nitrides 5. Novel UWBG materials and structures

  • ISBN: 978-0-12-815468-7
  • Editorial: Elsevier
  • Encuadernacion: Rústica
  • Páginas: 475
  • Fecha Publicación: 01/05/2019
  • Nº Volúmenes: 1
  • Idioma: Inglés