Fundamentals of solid state engineering

Fundamentals of solid state engineering

Razeghi, M.

72,75 €(IVA inc.)

Fundamentals of Solid State Engineering, 3rd Edition, provides a multi-disciplinary introduction to solid state engineering, combining concepts from physics, chemistry, electrical engineering, materials science and mechanical engineering. Revised throughout, this third edition includes new topics such as electron-electron and electron-phonon interactions, in addition to the Kane effective mass method. A chapter devoted to quantum mechanics has been expanded to cover topics such as the harmonic oscillator, the hydrogen atom, the quantum mechanical description of angular momentum and the origin of spin. This textbook also features an improved transport theory description, which now goes beyond Drude theory, discussing the Boltzmann approach. Introducing students to the rigorous quantum mechanical way of thinking about and formulating transport processes, this textbook presents the basic physics concepts and thorough treatment of semiconductor characterization technology, designed for solid state engineers. Provides a multidisciplinary introduction to quantum mechanics, solid state physics, advanced devices, and fabrication Covers wide range of topics ina standardized style and notation Most up to date developments in semiconductor physics and nano-engineering Mathematical derivations are carried through in detail with emphasis on clarity Timely application areas such as biophotonics, bioelectronics INDICE: Crystalline Properties of Solids.- Electronic Structure of Atoms.-Introduction to Quantum Mechanics.- Electrons and Energy Band Structures in Crystals.- Phonons.- Thermal Properties of Crystals.- Equilibrium Charge Carrier Statistics in Semiconductors.- Non-Equilibrium Electrical Properties of Semiconductors.- Semiconductor Junctions.- Optical Properties of Semiconductors.- Electron-electron interaction: Screening Theory.- Low Dimensional Quantum Structures.- Electron-phonon Interactions.- Quantum Tunneling and Transport in Quasi -2-Dimensional Channels.- Semiconductor Heterostructures.

  • ISBN: 978-0-387-92167-9
  • Editorial: Springer
  • Encuadernacion: Cartoné
  • Páginas: 764
  • Fecha Publicación: 01/04/2009
  • Nº Volúmenes: 1
  • Idioma: Inglés