Gan-based laser diodes: towards longer wavelengths and short pulses

The emergence of highly efficient short-wavelength laser diodes based on the III-V compound semiconductor GaN has not only enabled high-density optical data storage, but is also expected to revolutionize display applications. Moreover, a variety of scientific applications in biophotonics, materials research and quantum optics can benefit from these versatile and cost-efficient laser light sources in the near-UV to green spectral range. This thesis describes the device physics of GaN-based laser diodes, together with recent efforts to achieve longer emission wavelengths and short-pulse emission. Experimental and theoretical approaches are employed to address the individual device properties and optimize the laser diodes toward the requirements of specific applications. Significant contribution to expanding the spectral range of low-cost greenlaser diodes. Useful survey of the physics of GaN-based laser diodes. Nominated as an outstanding thesis by the Institute of Advanced Studies at Frankfurt University. INDICE: Introduction. Basic Concepts. Thermal Properties. Light Propagation and Amplification in Laser Diodes from Violet to Green. Semipolar Crystal Orientations for Green Laser Diodes. Dynamics of Charge Carriers and Photons. Short-Pulse Laser Diodes. Summary and Conclusions.

• ISBN: 978-3-642-24537-4
• Editorial: Springer Berlin Heidelberg
• Encuadernacion: Cartoné
• Páginas: 112
• Fecha Publicación: 31/12/2011
• Nº Volúmenes: 1
• Idioma: Inglés