This book presents information on electrostatic discharge (ESD) failure mechanisms, spanning a range of technologies from early CMOS applications to futureCMOS concepts. Voldman uses his wealth of experience in the field of ESD to address failure mechanisms associated with each CMOS generation, including those applicable to electrical overstress (EOS) and latchup. He also provides the processes or circuit solutions for eliminating failure defects, giving practical examples of failure mechanisms and the working applications they can effect. The book opens with an exposition of the historical trends behind ESD, including how technology scaling has affected the ESD failure mechanisms, and potential developments of the technology. The book goes on to examine different failure models and analysis tools, before applying this to CMOS technology; past,present and future developments, SOI technology, RF CMOS and RF MEMS. The final chapters of the book cover bipolar technology failures, Gallium Arsenide failure mechanisms and devices and magnetic recording failure mechanisms.
- ISBN: 978-0-470-51137-4
- Editorial: John Wiley & Sons
- Encuadernacion: Cartoné
- Páginas: 408
- Fecha Publicación: 17/07/2009
- Nº Volúmenes: 1
- Idioma: Inglés