This book emphasizes the importance of the fascinating atomistic insights into the defects and the impurities as well as the dynamic behaviors in silicon materials, which have become more directly accessible over the past 20 years thanks to newly developed experimental methods, first principle theories and computer simulation techniques.
This book is aimed at young researchers, scientists and technicians in related industries. The main purposes are to provide readers with: 1) the basic physics behind defects in silicon materials, 2) the atomistic modelings as well as the characterization techniques related to defects and impurities in silicon materials and 3)an overview of the wide range of the research fields.
- ISBN: 978-4-431-55799-9
- Editorial: Springer
- Encuadernacion: Cartoné
- Fecha Publicación: 22/12/2015
- Nº Volúmenes: 1
- Idioma: Inglés