Ultrawide Bandgap Semiconductors

Ultrawide Bandgap Semiconductors

Zhao, Yuji

182,00 €(IVA inc.)

Ultrawide Bandgap Semiconductors, Volume 104 in the Semiconductors and Semimetals series, highlights new advances in the field, with this new volume presenting interesting chapters. Each chapter is written by an international board of authors who examine such topics as Gallium oxide power devices, Advanced concepts in Ga2O3 power and RF devices, Material epitaxy, doping, and transport properties of (Al,Ga)2O3 alloys and heterostructures, Thermal science and engineering of Ga2O3 materials and devices, Controlling different phases of gallium oxide for solar blind photodetector and power electronics applications, Nanoscale AlGaN and BN: epitaxy, properties and device application, High-Al content AlGaN heterostructures and devices. Provides the authority and expertise of leading contributors from an international board of authorsPresents the latest release in the Semiconductors and Semimetals seriesUpdated release includes the latest information on Ultrawide Bandgap Semiconductors INDICE: 1. Gallium oxide power devices Masataka Higashiwaki 2. Advanced concepts in Ga2O3 power and RF devices Huili Grace Xing 3. Material epitaxy, doping, and transport properties of (Al,Ga)2O3 alloys and heterostructures Siddharth Rajan 4. Thermal science and engineering of Ga2O3 materials and devices Samuel Graham 5. Controlling different phases of gallium oxide for solar blind photodetector and power electronics applications Haiding Sun 6. Nanoscale AlGaN and BN: epitaxy, properties and device application Zetian Mi 7. High-Al content AlGaN heterostrutures and devices Robert Kaplar 8. AlN nonlinear optics and integrated photonics Hong Tang 9. Material epitaxy of AlN thin films Xinqiang Wang 10. AlGaN/GaN MEMS devices for extreme harsh environments Debbie Senesky 11. Supercontinuum generation in AlN waveguides Yuji Zhao 12. Thin film ultraviolet laser diodes and light emitting diodes Haiding Sun 13. Materials science and devices applications of diamond Robert J. Nemanich 14. Electrical transport properties of h-BN Jingyu Lin and Hongxing Jiang 15. Ultrawide Bandgap Semiconductors Yuji Zhao and Zetian Mi 16. Boron nitride quantum photonics Lee Bassett

  • ISBN: 978-0-12-822870-8
  • Editorial: Academic Press
  • Encuadernacion: Cartoné
  • Páginas: 422
  • Fecha Publicación: 01/10/2020
  • Nº Volúmenes: 1
  • Idioma: Inglés